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AO8846 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8846 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It is ESD protected. This device is suitable for use as a unidirectional or bi-directional load switch, facilitated by its common-drain configuration. Standard Product AO8846 is Pb-free (meets ROHS & Sony 259 specifications).
Features
VDS = 20V ID = 7.0A (VGS = 4.5V) RDS(ON) < 20m (VGS = 4.5V) RDS(ON) < 20m (VGS = 4.0V) RDS(ON) < 21m (VGS = 3.1V) RDS(ON) < 22m (VGS = 2.5V) RDS(ON) < 27m (VGS = 1.8V)
TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G1 1.8K
D1
D2
G2
1.8K
S1
S2
Absolute Maximum Ratings TA=25C unless otherwise noted Symbol 10 Sec Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
B
Steady State
20 8 5.7 4.8 25 1.0 0.7
Units V V A
TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
7 5.7 1.5 1.0 -55 to 150
W C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C
Symbol
A A
t 10s Steady State Steady State
RJA RJL
Typ 64 89 53
Max 83 120 70
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO8846
Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID = 250A, VGS = 0V VDS = 20V, VGS = 0V TJ = 55C VDS = 0V, VGS = 8V VDS = VGS ID = 250A VGS = 4.5V, VDS = 5V VGS = 4.5V, ID = 7.0A TJ=125C RDS(ON) Static Drain-Source On-Resistance VGS = 4.0V, ID = 7.0A VGS = 3.1V, ID = 6.5A VGS = 2.5V, ID = 6.5A VGS = 1.8V, ID = 6.0A gFS VSD IS Forward Transconductance VDS = 4.5V, ID = 7.0A IS = 1A,VGS = 0V Diode Forward Voltage Maximum Body-Diode Continuous Current 0.5 25 12 16 12 13 14 15 16 22 16.2 17 18 21 34 0.62 1 1.5 1295 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 160 87 1.8 10 VGS= 4.5V, VDS= 10V, ID= 7A 4.2 2.6 6.4 VGS=4.5V, VDS=10V, RL=1.4, RGEN=3 IF=7A, dI/dt=100A/s, VGS=-9V 12.4 42 15 31 6.8 41 13 1650 20 28 20 21 22 27 S V A pF
pF
Min 20
Typ
Max
Units V
1 5 10 0.7 1
A A V A
m
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
pF k nC nC nC ns ns ns ns ns nC
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=7A, dI/dt=100A/s, VGS=-9V
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using < 300s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev0 August 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO8846
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25 4.5V 20 15 ID (A) 10 5 0 0 0.5 1 1.5 2 2.5 3 VDS (Volts) Figure 1: On-Region Characteristics 23 Normalized On-Resistance VGS= 1.8V 21 RDS(ON) (m) 1.5 3.1V 2.5V 1.8V VGS=1.5V ID(A) 20 25 VDS= 5V
15
10
125C
5
25C
-40C 1.2 1.6 2
0 0 0.4 0.8 VGS(Volts) Figure 2: Transfer Characteristics
VGS= 2.5V ID= 6.5A VGS= 1.8V ID= 6A VGS= 4.5V ID= 7A
1.3
19
VGS= 2.5V VGS= 3.1V VGS= 4.0V VGS= 4.5V 0 2 4
1.1
17
0.9
15
I6=-6.5A, 8 dI/dt=100A/s 10 F
0.7 -50 -25 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1E+01
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
55 ID= 7.0A 45 RDS(ON) (m) 35
1E+00 1E-01 IS (A) 1E-02 125C
1E-03 125C 25 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 25C COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN 1E-04 25C OUT OF15 SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, -40C 1E-05 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. -40C 1E-06 5 0.0 0.2 0.4 0.6 0.8 1.0 1 2 3 4 5 6 7 8 VSD (Volts) VGS (Volts) Figure 6: Body-Diode Characteristics Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO8846
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 VGS (Volts) 3 2 1 0 0 2 4 6 8 10 12 Qg (nC) Figure 7: Gate-Charge Characteristics VDS= 10V ID= 7A 1800 1600 1400 Capacitance (pF) 1200 1000 800 600 400 200 0 0 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics Coss Crss Ciss
100 10s 10 ID (Amps) 100s
10000 1000 Power (W) 100 10 1 0.1 0.00001
TJ(Max)=150C TA=25C
1
RDS(ON) limited
1ms 10ms 100ms 10s DC
0.1
TJ(Max)=150C TA=25C 0.1 1
0.01
IF=-6.5A, dI/dt=100A/s 10 100
VDS (Volts)
0.001
0.1
10
1000
Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E)
10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=120C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton 0.01 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. T Single Pulse 0.001 0.00001
0.0001
0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
100
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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